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dc.contributor.authorMazzola, F.
dc.contributor.authorEdmonds, M.
dc.contributor.authorHøydalsvik, K.
dc.contributor.authorCarter, Damien
dc.contributor.authorMarks, Nigel
dc.contributor.authorCowie, B.
dc.contributor.authorThomsen, L.
dc.contributor.authorMiwa, J.
dc.contributor.authorSimmons, M.
dc.contributor.authorWells, J.
dc.date.accessioned2017-01-30T11:48:03Z
dc.date.available2017-01-30T11:48:03Z
dc.date.created2014-11-09T20:00:27Z
dc.date.issued2014
dc.identifier.citationMazzola, F. and Edmonds, M. and Høydalsvik, K. and Carter, D. and Marks, N. and Cowie, B. and Thomsen, L. et al. 2014. Determining the Electronic Confinement of a Subsurface Metallic State. ACS Nano. 8 (10): pp. 10223-10228.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/15133
dc.identifier.doi10.1021/nn5045239
dc.description.abstract

Dopant profiles in semiconductors are important for understanding nanoscale electronics. Highly conductive and extremely confined phosphorus doping profiles in silicon, known as Si:P δ-layers, are of particular interest for quantum computer applications, yet a quantitative measure of their electronic profile has been lacking. Using resonantly enhanced photoemission spectroscopy, we reveal the real-space breadth of the Si:P δ-layer occupied states and gain a rare view into the nature of the confined orbitals. We find that the occupied valley-split states of the δ-layer, the so-called 1Γ and 2Γ, are exceptionally confined with an electronic profile of a mere 0.40 to 0.52 nm at full width at half-maximum, a result that is in excellent agreement with density functional theory calculations. Furthermore, the bulk-like Si 3pz orbital from which the occupied states are derived is sufficiently confined to lose most of its pz-like character, explaining the strikingly large valley splitting observed for the 1Γ and 2Γ states.

dc.publisherAmerican Chemical Society
dc.subject2D confinement
dc.subjectSi:P d-layers
dc.subjectquantum computation
dc.subjectphotoemission
dc.titleDetermining the Electronic Confinement of a Subsurface Metallic State
dc.typeJournal Article
dcterms.source.volume8
dcterms.source.number10
dcterms.source.startPage10223
dcterms.source.endPage10228
dcterms.source.issn1936-0851
dcterms.source.titleACS Nano
curtin.note

This research was supported under Australian Research Council's Centre of Excellence for Quantum Computation and Communication Technology (project number CE110001027)

curtin.departmentNanochemistry Research Institute (Research Institute)
curtin.accessStatusOpen access


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