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    Investigation of mid-infrared AlInSb LEDs with an n-i-p structure

    Access Status
    Fulltext not available
    Authors
    Ding, Y.
    Meriggi, L.
    Steer, M.
    Thayne, I.
    MacGregor, C.
    Sorel, M.
    Ironside, Charlie
    Date
    2015
    Type
    Conference Paper
    
    Metadata
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    Citation
    Ding, Y. and Meriggi, L. and Steer, M. and Thayne, I. and MacGregor, C. and Sorel, M. and Ironside, C. 2015. Investigation of mid-infrared AlInSb LEDs with an n-i-p structure, pp. 38-40: Institute of Electrical and Electronics Engineers Inc..
    Source Title
    2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
    DOI
    10.1109/COMMAD.2014.7038646
    ISBN
    9781479968671
    School
    Department of Physics and Astronomy
    URI
    http://hdl.handle.net/20.500.11937/19225
    Collection
    • Curtin Research Publications
    Abstract

    We report on the investigation on mid-infrared AlInSb LEDs with an n-i-p structure. Compared to the conventional AlInSb LEDs with a p-i-n structure, a better current spreading corresponding to a uniform current distribution in the active region is expected in the n-i-p structure because of a high electron mobility in the n-type AlInSb material. The output optical power of laterally injected LEDs were investigated as a function of the device geometry by COMSOL simulations and confirmed by experimental results.

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