Investigation of mid-infrared AlInSb LEDs with an n-i-p structure
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Authors
Ding, Y.
Meriggi, L.
Steer, M.
Thayne, I.
MacGregor, C.
Sorel, M.
Ironside, Charlie
Date
2015Collection
Type
Conference Paper
Metadata
Show full item recordAbstract
We report on the investigation on mid-infrared AlInSb LEDs with an n-i-p structure. Compared to the conventional AlInSb LEDs with a p-i-n structure, a better current spreading corresponding to a uniform current distribution in the active region is expected in the n-i-p structure because of a high electron mobility in the n-type AlInSb material. The output optical power of laterally injected LEDs were investigated as a function of the device geometry by COMSOL simulations and confirmed by experimental results.
Citation
Ding, Y. and Meriggi, L. and Steer, M. and Thayne, I. and MacGregor, C. and Sorel, M. and Ironside, C. 2015. Investigation of mid-infrared AlInSb LEDs with an n-i-p structure, pp. 38-40: Institute of Electrical and Electronics Engineers Inc..
Source Title
2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Department
Department of Physics and Astronomy
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