Investigation of mid-infrared AlInSb LEDs with an n-i-p structure
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We report on the investigation on mid-infrared AlInSb LEDs with an n-i-p structure. Compared to the conventional AlInSb LEDs with a p-i-n structure, a better current spreading corresponding to a uniform current distribution in the active region is expected in the n-i-p structure because of a high electron mobility in the n-type AlInSb material. The output optical power of laterally injected LEDs were investigated as a function of the device geometry by COMSOL simulations and confirmed by experimental results.
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Ding, Y.; Meriggi, L.; Steer, M.; Bulashevich, K.; Thayne, I.; MacGregor, C.; Sorel, M.; Ironside, Charlie (2015)Mid-mfrared LEDs based on AlInSb double heterostrucutre and multiple quantum well active regions have been simulated and investigated using the SimuLED software package from STR. The simulation results indicate that the ...
Meriggi, L.; Steer, M.; Sorel, M.; Ironside, Charlie; Thayne, I.; MacGregor, C. (2013)No abstract available
Meriggi, L.; Steer, M.; Ding, Y.; Thayne, I.; Macgregor, C.; Ironside, Charlie; Sorel, M. (2015)We report on the impact of lateral current spreading on light emission from aluminium indium antimonide (AlInSb) mid-infrared p-i-n light-emitting diodes (LEDs) grown by molecular beam epitaxy on a GaAs substrate. Due to ...