Investigation of mid-infrared AlInSb LEDs with an n-i-p structure
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2015Type
Conference Paper
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We report on the investigation on mid-infrared AlInSb LEDs with an n-i-p structure. Compared to the conventional AlInSb LEDs with a p-i-n structure, a better current spreading corresponding to a uniform current distribution in the active region is expected in the n-i-p structure because of a high electron mobility in the n-type AlInSb material. The output optical power of laterally injected LEDs were investigated as a function of the device geometry by COMSOL simulations and confirmed by experimental results.
Citation
Ding, Y. and Meriggi, L. and Steer, M. and Thayne, I. and MacGregor, C. and Sorel, M. and Ironside, C. 2015. Investigation of mid-infrared AlInSb LEDs with an n-i-p structure, pp. 38-40: Institute of Electrical and Electronics Engineers Inc..
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2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
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Department of Physics and Astronomy
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