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    Nanoscale elastic-plastic deformation and stress distributions on the C plane of sapphire single crystal during nanoindentation

    158200_158200.pdf (789.6Kb)
    Access Status
    Open access
    Authors
    Mao, W.
    Shen, Y.
    Lu, Chungsheng
    Date
    2011
    Type
    Journal Article
    
    Metadata
    Show full item record
    Citation
    Mao, W.G. and Shen, Y.G. and Lu, C. 2011. Nanoscale elastic-plastic deformation and stress distributions on the C plane of sapphire single crystal during nanoindentation. Journal of the European Ceramic Society. 31 (10): pp. 1865-1871.
    Source Title
    Journal of the European Ceramic Society
    DOI
    10.1016/j.jeurceramsoc.2011.04.012
    ISSN
    09552219
    School
    Department of Mechanical Engineering
    Remarks

    NOTICE: this is the author’s version of a work that was accepted for publication in the Journal of the European Ceramic Society. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in the Journal of the European Ceramic Society, vol. 31, no. 10, 2011, http://dx.doi.org/10.1016/j.jeurceramsoc.2011.04.012

    URI
    http://hdl.handle.net/20.500.11937/19715
    Collection
    • Curtin Research Publications
    Abstract

    The nanoscale elastic-plastic characteristics of the C plane of sapphire single crystal were studied by ultra-low nanoindentation loads with a Berkovich indenter within the indentation depth less than 60 nm. The smaller the loading rate is, the greater the corresponding critical pop-in loads and the width of pop-in extension become. It is shown that hardness obviously exhibits the indentation size effect (ISE), which is 46.7 plus or equal to 15 GPa at the ISE region and is equal to 27.5 plus or equal to 2 GPa at the non-ISE region. The indentation modulus of the C plane decreases with increasing the indentation depth and equals 420.6 plus or equal to 20 GPa at the steady-state when the indentation depth exceeds 60nm. Based on the Schmidt law, Hertzian contact theory and crystallography, the possibilities of activation of primary slip systems indented on the C surface and the distributions of critical resolve shear stresses on the slip plane were analyzed.

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