Atomic and electronic structure of single and multiple vacancies in GaN nanowires from first-principles
| dc.contributor.author | Carter, Damien | |
| dc.contributor.author | Stampfl, C. | |
| dc.date.accessioned | 2017-01-30T12:25:51Z | |
| dc.date.available | 2017-01-30T12:25:51Z | |
| dc.date.created | 2014-10-08T02:29:17Z | |
| dc.date.issued | 2009 | |
| dc.identifier.citation | Carter, D. and Stampfl, C. 2009. Atomic and electronic structure of single and multiple vacancies in GaN nanowires from first-principles. Physical Review B. 79. | |
| dc.identifier.uri | http://hdl.handle.net/20.500.11937/21544 | |
| dc.publisher | American Physical Society | |
| dc.title | Atomic and electronic structure of single and multiple vacancies in GaN nanowires from first-principles | |
| dc.type | Journal Article | |
| dcterms.source.volume | 79 | |
| dcterms.source.issn | 10980121 | |
| dcterms.source.title | Physical Review B | |
| curtin.accessStatus | Fulltext not available |