High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors
| dc.contributor.author | Karar, A. | |
| dc.contributor.author | Das, Narottam | |
| dc.contributor.author | Tan, C. | |
| dc.contributor.author | Alameh, K. | |
| dc.contributor.author | Lee, Y. | |
| dc.contributor.author | Karouta, F. | |
| dc.date.accessioned | 2017-01-30T12:34:10Z | |
| dc.date.available | 2017-01-30T12:34:10Z | |
| dc.date.created | 2015-03-03T20:17:20Z | |
| dc.date.issued | 2011 | |
| dc.identifier.citation | Karar, A. and Das, N. and Tan, C. and Alameh, K. and Lee, Y. and Karouta, F. 2011. High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors. Applied Physics Letters. 99 (13): pp. 133112-1-133112-3. | |
| dc.identifier.uri | http://hdl.handle.net/20.500.11937/22875 | |
| dc.identifier.doi | 10.1063/1.3625937 | |
| dc.description.abstract |
We report the experimental characterization of high-responsivity plasmonics-based GaAsmetal-semiconductor-metalphotodetector (MSM-PD) employing metal nano-gratings. Both the geometry and light absorption near the designed wavelength are theoretically and experimentally investigated. The measured photocurrent enhancement is 4-times in comparison with a conventional single-slit MSM-PD. We observe reduction in the responsivity as the bias voltage increases and the input light polarization varies. Our experimental results demonstrate the feasibility of developing a high-responsivity, low bias-voltage high-speed MSM-PD. | |
| dc.publisher | American Institute of Physics | |
| dc.title | High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors | |
| dc.type | Journal Article | |
| dcterms.source.volume | 99 | |
| dcterms.source.number | 13 | |
| dcterms.source.startPage | 133112 | |
| dcterms.source.endPage | 1 | |
| dcterms.source.issn | 00036951 | |
| dcterms.source.title | Applied Physics Letters | |
| curtin.department | Department of Electrical and Computer Engineering | |
| curtin.accessStatus | Fulltext not available |