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    Manipulating the orientation of an organic adsorbate on silicon: a NEXAFS study of acetophenone on Si(0 0 1)

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    Authors
    O'Donnell, Kane
    Warschkow, O.
    Suleman, A.
    Fahy, A.
    Thomsen, L.
    Schofield, S.
    Date
    2015
    Type
    Journal Article
    
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    Citation
    O'Donnell, K. and Warschkow, O. and Suleman, A. and Fahy, A. and Thomsen, L. and Schofield, S. 2015. Manipulating the orientation of an organic adsorbate on silicon: a NEXAFS study of acetophenone on Si(0 0 1). Journal of Physics: Condensed Matter. 27 (5): pp. 1-9.
    Source Title
    Journal of Physics: Condensed Matter
    DOI
    10.1088/0953-8984/27/5/054002
    ISSN
    0953-8984
    School
    Department of Physics and Astronomy
    URI
    http://hdl.handle.net/20.500.11937/22991
    Collection
    • Curtin Research Publications
    Abstract

    We investigate the chemical and structural configuration of acetophenone on Si(0 0 1) using synchrotron radiation core-level spectroscopy techniques and density functional theory calculations. Samples were prepared by vapour phase dosing of clean Si(0 0 1) surfaces with acetophenone in ultrahigh vacuum. Near edge x-ray absorption fine structure spectroscopy and photoelectron spectroscopy measurements were made at room temperature as a function of coverage density and post-deposition anneal temperature. We show that the dominant room temperature adsorption structure lies flat on the substrate, while moderate thermal annealing induces the breaking of Si-C bonds between the phenyl ring and the surface resulting in the reorientation of the adsorbate into an upright configuration.

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