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    Production, characterization and application of silicon-on-sapphire wafers

    Access Status
    Fulltext not available
    Authors
    Pramanik, Alokesh
    Zhang, L.
    Liu, M.
    Date
    2010
    Type
    Journal Article
    
    Metadata
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    Citation
    Pramanik, Alokesh and Liu, Mei and Zhang, L. C. 2010. Production, characterization and application of silicon-on-sapphire wafers. Key Engineering Materials. 443: pp. 567-572.
    Source Title
    Key Engineering Materials
    DOI
    10.4028/www.scientific.net/KEM.443.567
    ISSN
    10139826
    URI
    http://hdl.handle.net/20.500.11937/25303
    Collection
    • Curtin Research Publications
    Abstract

    Silicon-on-sapphire (SOS) thin film systems have had specific electronic applications because they can reduce noise and current leakage in metal oxide semiconductor transistors. However, there are some issues in producing defect-free SOS wafers. Dislocations, misfit, micro twins and residual stresses can emerge during the SOS processing and they will reduce the performance of an SOS product. For some reasons, research publications on SOS in the literature are not extensive, and as a result, the information available in the public domain is fragmentary. This paper aims to review the subject matter in an as complete as possible manner based on the published information about the production, characterization and application of SOS wafers.

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