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    Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry

    Access Status
    Fulltext not available
    Authors
    Meriggi, L.
    Steer, M.
    Ding, Y.
    Thayne, I.
    Macgregor, C.
    Ironside, Charlie
    Sorel, M.
    Date
    2015
    Type
    Journal Article
    
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    Citation
    Meriggi, L. and Steer, M. and Ding, Y. and Thayne, I. and Macgregor, C. and Ironside, C. and Sorel, M. 2015. Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry. Journal of Applied Physics. 117 (6).
    Source Title
    Journal of Applied Physics
    DOI
    10.1063/1.4905081
    ISSN
    0021-8979
    School
    Department of Physics and Astronomy
    URI
    http://hdl.handle.net/20.500.11937/25803
    Collection
    • Curtin Research Publications
    Abstract

    We report on the impact of lateral current spreading on light emission from aluminium indium antimonide (AlInSb) mid-infrared p-i-n light-emitting diodes (LEDs) grown by molecular beam epitaxy on a GaAs substrate. Due to the high effective mass of holes in AlxIn1-xSb, the resistivity of p-type material determines the 3-D distribution of current flow in the devices. This work shows that maximum light emission, as measured by electroluminescence, and 3-times wall-plug efficiency improvement were obtained at room temperature from devices with a p-type contact grid geometry with a spacing of twice the current spreading length in the p-type material, which was measured by spatially resolved photocurrent. The LED with the optimal contact geometry exhibits improved performance at high injection current levels thanks to the more uniform carrier distribution across the device area.

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