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dc.contributor.authorWang, J.
dc.contributor.authorShen, Y.
dc.contributor.authorSong, F.
dc.contributor.authorKe, F.
dc.contributor.authorBai, Y.
dc.contributor.authorLu, Chunsheng
dc.identifier.citationWang, J. and Shen, Y. and Song, F. and Ke, F. and Bai, Y. and Lu, C. 2015. Materials can be strengthened by nanoscale stacking faults. Europhysics Letters. 110 (3): pp. 36002-p1-36002-p5.

In contrast to the strength of single crystals, stacking faults (SFs) are usually an unfavorable factor that weakens materials. Using molecular-dynamics simulations, we find that parallel-spaced SFs can dramatically enhance the strength of zinc-blende SiC nanorods, which is even beyond that of their single-crystal counterparts. Strengthening is achieved by restricting dislocation activities between nanoscale neighboring SFs and its overall upward trend is dominated by the volume fraction of SFs. The similar strengthening mechanism is also found in face-centered-cubic metals and their alloys. It is more promising than the traditional methods of decreasing nanoscale grains or twins due to the inverse Hall-Petch effect. This study sheds light on the structural design of nanomaterials with high strength.

dc.publisherInstitute of Physics Publishing Ltd.
dc.titleMaterials can be strengthened by nanoscale stacking faults
dc.typeJournal Article
dcterms.source.titleeurophysics letters
curtin.departmentDepartment of Mechanical Engineering
curtin.accessStatusFulltext not available

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