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    Characterisation of amorphous silica in air-oxidised Ti3SiC2 at 500–1000 °C using secondary-ion mass spectrometry, nuclear magnetic resonance and transmission electron microscopy

    Access Status
    Fulltext not available
    Authors
    Pang, W
    Low, It Meng
    Hanna, J.
    Date
    2010
    Type
    Journal Article
    
    Metadata
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    Citation
    Pang, W. and Low, I.M. and Hanna, J. 2010. Characterisation of amorphous silica in air-oxidised Ti3SiC2 at 500–1000 °C using secondary-ion mass spectrometry, nuclear magnetic resonance and transmission electron microscopy. Materials Chemistry and Physics. 121 (3): pp. 453-458.
    Source Title
    Materials Chemistry and Physics
    DOI
    10.1016/j.matchemphys.2010.02.005
    ISSN
    02540584
    School
    School of Applied Science
    URI
    http://hdl.handle.net/20.500.11937/27721
    Collection
    • Curtin Research Publications
    Abstract

    In this paper we have described the use of secondary-ion mass spectrometry (SIMS), solid state 29Si magic-angle-spinning (MAS) nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM) to detect the existence of amorphous silica in Ti3SiC2 oxidised at 500–1000 °C. The formation of amorphous SiO2 and growth of crystalline TiO2 with temperature was monitored using dynamic SIMS and synchrotron radiation diffraction. A duplex structure with an outer TiO2-rich layer and an inner mixed layer of SiO2 and TiO2 was observed. Results of NMR and TEM verified for the first time the direct evidence of amorphous silica formation during the oxidation of Ti3SiC2 at the temperature range 500–1000 °C.

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