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dc.contributor.authorBennett, J. M.
dc.contributor.authorWarschkow, O.
dc.contributor.authorMarks, Nigel
dc.contributor.authorMcKenzie, D.
dc.date.accessioned2017-01-30T13:01:23Z
dc.date.available2017-01-30T13:01:23Z
dc.date.created2011-02-15T00:35:01Z
dc.date.issued2010
dc.identifier.citationBennett, Jennifer M. and Warschkow, Oliver and Marks, Nigel A. and McKenzie, David R. 2010. Pathways for thermal phosphorus desorption from the silicon (001) surface. Physical Review. B 82. pp. 235417-1-235417-8.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/27831
dc.identifier.doi10.1103/PhysRevB.82.235417
dc.description.abstract

We use density-functional theory and transition-state search methods to characterize the thermal desorption of P2 molecules from the phosphorus-doped silicon 001 surface. We compare two desorption pathways, one proceeding via an in-surface P-P homodimer, the other via an on-surface P-P addimer. While intuitive, the homodimer pathway has an overly large reaction barrier which is not consistent with experimental measurements in the literature. Instead, P2 desorption proceeds by the alternative addimer pathway which requires the presence of silicon adatoms. We present a simple chemical-potential model which explains the appearance of these adatoms at high temperatures.

dc.publisherAmerican Physical Society
dc.titlePathways for thermal phosphorus desorption from the silicon (001) surface
dc.typeJournal Article
dcterms.source.volume82
dcterms.source.startPage235417
dcterms.source.endPage1
dcterms.source.issn10980121
dcterms.source.titlePhysical Review B
curtin.departmentNanochemistry Research Institute (Research Institute)
curtin.accessStatusFulltext not available


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