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dc.contributor.authorDevanathan, R
dc.contributor.authorThevuthasan, S
dc.contributor.authorGale, Julian
dc.date.accessioned2017-01-30T13:30:07Z
dc.date.available2017-01-30T13:30:07Z
dc.date.created2009-06-29T20:01:30Z
dc.date.issued2009
dc.identifier.citationDevanathan, R. and Thevuthasan, S. and Gale, J. D. 2009. Defect interactions and ionic transport in scandia stabilized zirconia. Physical Chemistry Chemical Physics 11: pp. 5506-5511.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/32271
dc.identifier.doi10.1039/b902764e
dc.description.abstract

Classical molecular dynamics simulation has been used to study ionic transport inscandia-stabilized zirconia, as well as scandia and yttria-co-doped zirconia, as a function of temperature and composition. The oxygen diffusion coefficient shows a peak at a composition of 6 mol% Sc2O3. At 1125 K and higher temperatures, oxygen vacancies prefer to be second nearest neighbours to yttrium ions and first neighbours to scandium ions, because the defect interactions in scandia-stabilized zirconia are governed mainly by electrostatic effects. Oxygen migration between cation tetrahedra is impeded less effectively by Sc-Sc edges than by Y-Y edges. The formation of neutral dopant-anion vacancy clusters is favoured, in agreement with recent nuclearmagnetic resonance observations.

dc.publisherRoyal Society of Chemistry
dc.titleDefect interactions and ionic transport in scandia stabilized zirconia
dc.typeJournal Article
dcterms.source.volume11
dcterms.source.startPage5506
dcterms.source.endPage5511
dcterms.source.issn14639076
dcterms.source.titlePhysical Chemistry Chemical Physics
curtin.departmentNanochemistry Research Institute (Research Institute)
curtin.accessStatusFulltext not available
curtin.facultyNanochemistry Research Institute (NRI)
curtin.facultyFaculty of Science and Engineering


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