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Reconfigurable repetition rate in colliding-pulse mode locked lasers with non-absorbing mirrors

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Tandoi, G.
Ironside, Charlie
Bryce, A.
Date
2011
Type
Conference Paper

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Tandoi, G. and Ironside, C. and Bryce, A. 2011. Reconfigurable repetition rate in colliding-pulse mode locked lasers with non-absorbing mirrors, in Proceedings of the 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC), May 22-26 2011. Munich: IEEE.
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2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
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Department of Physics and Astronomy
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Abstract

In this work we investigate the mode-locking (ML) operation of a multiple colliding pulse mode locked (MCPM) laser with multiple saturable absorbers (SA) placed in the 3.7mm long cavity. The 830nm laser material we use is a GaAs/AlχGaι.χAs double quantum well (QW) graded-index separate confinement heterostructure (GRINSCH), with an epitaxial design similar to the one reported. The 148μm long SAs are placed at %, ιΛ and 3A of the laser length, allowing the selection of the harmonic of the round trip frequency (~10GHz). Sputtering-induced disordering (SID) quantum well intermixing (QWI) is used to integrate non-absorbing mirrors (NAM) in the cavity, as they improve the output power limit due to cathastrophic optical mirror damage (COMD). The 2nd (~20GHz) or the 4th (~40GHz) harmonics of the round-trip frequency are selected when the SA2 or the SA3 are reverse biased, respectively. On the other hand, no ML operation is observed when two SAs are reverse biased at the same time, preventing the selection of the 3rd harmonic. The intensity autocorrelation traces relative to the 20 and 40GHz ML regimes are shown.