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    Enhanced red fluorescence in Sr 2Si 1-xGe xO 4:Eu 3+ phosphors by the substitution of Si by Ge for white light emitting diodes

    Access Status
    Fulltext not available
    Authors
    Huang, L.
    Xu, S.
    Guo, M.
    Wang, C.
    Hua, Y.
    Zhao, S.
    Deng, D.
    Wang, H.
    Jia, Guohua
    Date
    2012
    Type
    Journal Article
    
    Metadata
    Show full item record
    Citation
    Huang, L. and Xu, S. and Guo, M. and Wang, C. and Hua, Y. and Zhao, S. and Deng, D. et al. 2012. Enhanced red fluorescence in Sr 2Si 1-xGe xO 4:Eu 3+ phosphors by the substitution of Si by Ge for white light emitting diodes. Journal of Physics and Chemistry of Solids. 73 (7): pp. 886-889.
    Source Title
    Journal of Physics and Chemistry of Solids
    DOI
    10.1016/j.jpcs.2012.02.014
    ISSN
    0022-3697
    School
    Nanochemistry Research Institute
    URI
    http://hdl.handle.net/20.500.11937/37280
    Collection
    • Curtin Research Publications
    Abstract

    Eu 3-doped Sr 2Si 1-xGe xO 4 (x=0-1) phosphors have been prepared by the high temperature solid-state reaction method. The luminescent properties of these phosphors were investigated. Red fluorescence of Eu 3 is enhanced gradually in the samples with increasing substitution of Si by Ge upon the excitation of 393 nm light. The intensity is increased by 50% with full substitution of Si by Ge. These results are originated from the structural changes and the phonon energy reduction in the samples due to the substitution of Si by Ge. The CIE chromaticity coordinates of the phosphors vary slightly around (0.62, 0.37) and all are in the red color region. The results indicate that these phosphors could be promising red phosphors for white light emitting diodes. © 2012 Elsevier Ltd.

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