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dc.contributor.authorWarschkow, O.
dc.contributor.authorSchofield, S.
dc.contributor.authorMarks, Nigel
dc.contributor.authorRadny, M.
dc.contributor.authorSmith, P.
dc.contributor.authorMcKenzie, D.
dc.date.accessioned2017-01-30T14:16:01Z
dc.date.available2017-01-30T14:16:01Z
dc.date.created2014-10-08T03:10:53Z
dc.date.issued2008
dc.identifier.citationWarschkow, O. and Schofield, S. and Marks, N. and Radny, M. and Smith, P. and McKenzie, D. 2008. Water on Silicon (001): C-defects and Initial Steps of Surface Oxidation. Physical Review B. 77 (20): pp. 201305-201309.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/38245
dc.publisherAmerican Physical Society
dc.titleWater on Silicon (001): C-defects and Initial Steps of Surface Oxidation
dc.typeJournal Article
dcterms.source.volume77
dcterms.source.number20
dcterms.source.startPage201305
dcterms.source.endPage201309
dcterms.source.issn1098-0121
dcterms.source.titlePhysical Review B
curtin.accessStatusFulltext not available


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