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    Sintering behavior and dielectric properties of Al 2O 3 ceramics with CaMgSi 2O 6 addition

    Access Status
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    Authors
    Wang, H.
    Feng, S.
    Yang, W.
    Ma, H.
    Jia, Guohua
    Xu, S.
    Date
    2012
    Type
    Journal Article
    
    Metadata
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    Citation
    Wang, H. and Feng, S. and Yang, W. and Ma, H. and Jia, G. and Xu, S. 2012. Sintering behavior and dielectric properties of Al 2O 3 ceramics with CaMgSi 2O 6 addition. Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan. 120 (1403): pp. 268-271.
    Source Title
    Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
    ISSN
    1882-0743
    School
    Nanochemistry Research Institute
    URI
    http://hdl.handle.net/20.500.11937/40392
    Collection
    • Curtin Research Publications
    Abstract

    Al 2O 3CaMgSi 2O 6 ceramics with different amount of CaMgSi 2O 6 additions were prepared by a conventional solid-state method, and the effects of CaMgSi 2O 6 addition on the sintering behavior and dielectric properties of Al 2O 3 ceramics have been investigated. CaMgSi 2O 6 was used as a liquid sintering aid to effectively lower the sintering temperature of Al 2O 3 ceramics and its addition resulted in the presence of CaAl 2Si 2O 8 and MgAl 2O 4 phases. However, the CaMgSi 2O 6 addition deteriorated the dielectric properties of Al 2O 3CaMgSi 2O 6 ceramics because of the higher dielectric loss of the derived CaAl 2Si 2O 8 and MgAl 2O 4 compared with that of Al 2O 3 ceramics. After sintered at 1450°C, the Al 2O 3CaMgSi 2O 6 ceramic with 10 wt% CaMgSi 2O 6 addition possessed dielectric properties of e r = 9.83, tan d = 1.5 × 10 -4 (1 MHz) and Q × f = 20,425GHz (f 0 = 12 GHz). © 2012 The Ceramic Society of Japan.

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