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    Reduction of Charge Recombination by an Amorphous Titanium Oxide Interlayer in Layered Graphene/Quantum Dots Photochemical Cells

    Access Status
    Fulltext not available
    Authors
    Yang, H.
    Guo, C.
    Guai, G.
    Song, Q.
    Jiang, San Ping
    Li, C.
    Date
    2011
    Type
    Journal Article
    
    Metadata
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    Citation
    Yang, H. and Guo, C. and Guai, G. and Song, Q. and Jiang, S.P. and Li, C. 2011. Reduction of Charge Recombination by an Amorphous Titanium Oxide Interlayer in Layered Graphene/Quantum Dots Photochemical Cells. ACS Applied Materials and Interfaces. 3 (6): pp. 1940-1945.
    Source Title
    ACS Applied Materials and Interfaces
    ISSN
    1944-8244
    School
    Department of Chemical Engineering
    URI
    http://hdl.handle.net/20.500.11937/41348
    Collection
    • Curtin Research Publications
    Abstract

    The effect of an amorphous TiOx interlayer on layered graphene/quantum dots photochemical cells has been investigated. The addition of the TiOx interlayer eliminates the decay of photocurrent in the initial seconds after light illumination and significantly increases the slope of the steady-state photocurrent versus the light intensity. The open-circuit voltage decay measurements further illustrate a longer electron lifetime when an amorphous TiOx interlayer is applied. Consequently, the photocurrent and photovoltage of the photovoltaic cell with a TiOx interlayer are greatly increased. This work emonstrates that the graphene/amorphous TiOx composite structure effectively inhibits charge recombination while enhancing charge transfer, providing a promising scaffold for quantum dots and dye-sensitized photovoltaic cells.

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