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dc.contributor.authorWarschkow, O.
dc.contributor.authorMarks, Nigel
dc.contributor.authorSchofield, S.
dc.contributor.authorRadny, M.
dc.contributor.authorSmith, P.
dc.contributor.authorMcKenzie, D.
dc.date.accessioned2017-01-30T14:53:02Z
dc.date.available2017-01-30T14:53:02Z
dc.date.created2014-10-08T06:00:49Z
dc.date.issued2010
dc.identifier.citationWarschkow, O. and Marks, N. and Schofield, S. and Radny, M. and Smith, P. and McKenzie, D. 2010. Comment on ‘‘Transformation of C-type defects on Si(100)-2 x 1 surface at room temperature STM/STS study [Surf. Sci. 602 (2008) 2835]”. Surface Science. 604: pp. 235-236.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/41559
dc.publisherElsevier Science BV
dc.titleComment on ‘‘Transformation of C-type defects on Si(100)-2 x 1 surface at room temperature STM/STS study [Surf. Sci. 602 (2008) 2835]”
dc.typeJournal Article
dcterms.source.volume604
dcterms.source.startPage235
dcterms.source.endPage236
dcterms.source.issn00396028
dcterms.source.titleSurface Science
curtin.departmentNanochemistry Research Institute (Research Institute)
curtin.accessStatusFulltext not available


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