Continuously tunable band gap in GaN/AlN (0001) superlattices via built-in electric field

dc.contributor.author	Cui, X.
dc.contributor.author	Carter, Damien
dc.contributor.author	Fuchs, M.
dc.contributor.author	Delley, B.
dc.contributor.author	Wei, S.
dc.contributor.author	Freeman, A.
dc.contributor.author	Stampfl, C.
dc.date.accessioned	2017-01-30T14:58:00Z
dc.date.available	2017-01-30T14:58:00Z
dc.date.created	2010-12-14T20:02:50Z
dc.date.issued	2010
dc.identifier.citation	Cui, X. and Carter, D.J. and Fuchs, M. and Delley, B. and Wei, S. and Freeman, A. and Stampfl, C. 2010. Continuously tunable band gap in GaN/AlN (0001) superlattices via built-in electric field. Physical Review B. 81: pp. 155301-155301.
dc.identifier.uri	http://hdl.handle.net/20.500.11937/42191
dc.identifier.doi	10.1103/PhysRevB.81.155301
dc.publisher	American Physical Society
dc.title	Continuously tunable band gap in GaN/AlN (0001) superlattices via built-in electric field
dc.type	Journal Article
dcterms.source.volume	81
dcterms.source.startPage	155301
dcterms.source.endPage	155301
dcterms.source.issn	10980121
dcterms.source.title	Physical Review B
curtin.department	Nanochemistry Research Institute (Research Institute)
curtin.accessStatus	Fulltext not available