Single P and As dopants in the Si(001) surface
| dc.contributor.author | Radny, M. | |
| dc.contributor.author | Smith, P. | |
| dc.contributor.author | Reusch, T. | |
| dc.contributor.author | Warschkow, O. | |
| dc.contributor.author | Marks, Nigel | |
| dc.contributor.author | Shi, H. | |
| dc.contributor.author | McKenzie, D. | |
| dc.contributor.author | Schofield, S. | |
| dc.contributor.author | Curson, N. | |
| dc.contributor.author | Simmons, M. | |
| dc.date.accessioned | 2017-01-30T14:58:43Z | |
| dc.date.available | 2017-01-30T14:58:43Z | |
| dc.date.created | 2014-10-08T03:10:53Z | |
| dc.date.issued | 2007 | |
| dc.identifier.citation | Radny, M. and Smith, P. and Reusch, T. and Warschkow, O. and Marks, N. and Shi, H. and McKenzie, D. et al. 2007. Single P and As dopants in the Si(001) surface. The Journal of Chemical Physics. 127: pp. 184706-1-184706-9. | |
| dc.identifier.uri | http://hdl.handle.net/20.500.11937/42294 | |
| dc.publisher | American Institute of Physics | |
| dc.title | Single P and As dopants in the Si(001) surface | |
| dc.type | Journal Article | |
| dcterms.source.volume | 127 | |
| dcterms.source.startPage | 184706 | |
| dcterms.source.endPage | 1 | |
| dcterms.source.issn | 10897690 | |
| dcterms.source.title | The Journal of Chemical Physics | |
| curtin.accessStatus | Fulltext not available |