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dc.contributor.authorNg, C.
dc.contributor.authorLe Saux, G.
dc.contributor.authorChockalingam, M.
dc.contributor.authorCiampi, Simone
dc.contributor.authorHarper, J.
dc.contributor.authorGooding, J.
dc.date.accessioned2017-01-30T15:01:23Z
dc.date.available2017-01-30T15:01:23Z
dc.date.created2016-09-12T08:37:07Z
dc.date.issued2010
dc.identifier.citationNg, C. and Le Saux, G. and Chockalingam, M. and Ciampi, S. and Harper, J. and Gooding, J. 2010. Preparation of thiol-terminated monolayers on silicon(100) surfaces using thioacetyl-protected alkynethiol, pp. 244-247.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/42676
dc.identifier.doi10.1109/ICONN.2010.6045195
dc.description.abstract

The attachment of acetyl-protected alkynethiol groups onto silicon(100) surfaces was achieved using a hydrosilylation methodology. Subsequent deprotection of the thiols using either hydrochloric acid or ammonia solution was investigated using X-ray photoelectron spectroscopy (XPS), and compared with similar reaction in solution. It was found that ammonia solution was more efficient than hydrochloric acid for the deprotection step. However, the deprotection was much less efficient on the surface than in solution. © 2010 IEEE.

dc.titlePreparation of thiol-terminated monolayers on silicon(100) surfaces using thioacetyl-protected alkynethiol
dc.typeConference Paper
dcterms.source.startPage244
dcterms.source.endPage247
dcterms.source.titleICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology
dcterms.source.seriesICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology
dcterms.source.isbn9781424452620
curtin.departmentNanochemistry Research Institute
curtin.accessStatusFulltext not available


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