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dc.contributor.authorEdmonds, M.
dc.contributor.authorHellerstedt, J.
dc.contributor.authorTadich, A.
dc.contributor.authorSchenk, A.
dc.contributor.authorO'Donnell, Kane
dc.contributor.authorTosado, J.
dc.contributor.authorButch, N.
dc.contributor.authorSyers, P.
dc.contributor.authorPaglione, J.
dc.contributor.authorFuhrer, M.
dc.date.accessioned2017-01-30T10:42:08Z
dc.date.available2017-01-30T10:42:08Z
dc.date.created2014-09-08T20:00:18Z
dc.date.issued2014
dc.identifier.citationEdmonds, M. and Hellerstedt, J. and Tadich, A. and Schenk, A. and O'Donnell, K. and Tosado, J. and Butch, N. et al. 2014. Air-Stable Electron Depletion of Bi2Se3 Using Molybdenum Trioxide into the Topological Regime. ACS Nano. 8 (6): pp. 6400-6406.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/4851
dc.identifier.doi10.1021/nn502031k
dc.description.abstract

We perform high-resolution photoelectron spectroscopy on in situ cleaved topological insulator Bi2Se3 single crystals and in situ transport measurements on Bi2Se3 films grown by molecular beam epitaxy. We demonstrate efficient electron depletion of Bi2Se3 via vacuum deposition of molecular MoO3, lowering the surface Fermi energy to within ~100 meV of the Dirac point, well into the topological regime. A 100 nm MoO3 film provides an air-stable doping and passivation layer.

dc.publisherAmerican Chemical Society
dc.subjectair-stable capping layer
dc.subjecttopological insulator
dc.subjectmolecular doping
dc.subjectBi2Se3
dc.titleAir-Stable Electron Depletion of Bi2Se3 Using Molybdenum Trioxide into the Topological Regime
dc.typeJournal Article
dcterms.source.volume8
dcterms.source.number6
dcterms.source.startPage6400
dcterms.source.endPage6406
dcterms.source.issn1936-0851
dcterms.source.titleACS Nano
curtin.departmentDepartment of Imaging and Applied Physics
curtin.accessStatusFulltext not available


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