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Understanding large plastic deformation of SiC nanowires at room temperature

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Open access
Authors
Wang, Jun
Lu, Chunsheng
Wang, Q.
Xiao, P.
Ke, F.
Bai, Y.
Shen, Y.
Liao, X.
Gao, H.
Date
2011
Type
Journal Article

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Wang, J. and Lu, C. and Wang, Q. and Xiao, P. and Ke, F. and Bai, Y. and Shen, Y. et al. 2011. Understanding large plastic deformation of SiC nanowires at room temperature. Europhysics Letters. 95 (6): pp. 63003-1-63003-5.
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europhysics letters
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Department of Mechanical Engineering
Remarks

This is an author-created, un-copy edited version of an article accepted for publication in Europhysics Letters. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at 10.1209/0295-5075/95/63003

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Abstract

Tensile behaviors of SiC [111] nanowires with various possible microstructures have been investigated by molecular-dynamics simulations. The results show that the large plastic deformation in these nanowires is induced by the anti-parallel sliding of 3C grains along an ultra- thin intergranular amorphous film parallel to the (11¯1) plane and inclined at an angle of 19.47◦ with respect to the nanowire axis. The resulting large plastic deformation of SiC nanowires at room temperature is attributed to the stretching, breaking and re-forming of Si–C bonds in the intergranular amorphous film, which is also evident from the sawtooth jumps in the stress-strain response.