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    From kinetic to collective behavior in thermal transport on semiconductors and semiconductor nanostructures

    Access Status
    Fulltext not available
    Authors
    de Tomas, Carla Mercedes
    Cantarero, A.
    Lopeandia, A.
    Alvarez, F.
    Date
    2014
    Type
    Journal Article
    
    Metadata
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    Citation
    de Tomas, C.M. and Cantarero, A. and Lopeandia, A. and Alvarez, F. 2014. From kinetic to collective behavior in thermal transport on semiconductors and semiconductor nanostructures. Journal of Applied Physics. 115 (16).
    Source Title
    Journal of Applied Physics
    DOI
    10.1063/1.4871672
    ISSN
    0021-8979
    School
    Department of Physics and Astronomy
    URI
    http://hdl.handle.net/20.500.11937/52010
    Collection
    • Curtin Research Publications
    Abstract

    We present a model which deepens into the role that normal scattering has on the thermal conductivity in semiconductor bulk, micro, and nanoscale samples. Thermal conductivity as a function of the temperature undergoes a smooth transition from a kinetic to a collective regime that depends on the importance of normal scattering events. We demonstrate that in this transition, the key point to fit experimental data is changing the way to perform the average on the scattering rates. We apply the model to bulk Si with different isotopic compositions obtaining an accurate fit. Then we calculate the thermal conductivity of Si thin films and nanowires by only introducing the effective size as additional parameter. The model provides a better prediction of the thermal conductivity behavior valid for all temperatures and sizes above 30 nm with a single expression. Avoiding the introduction of confinement or quantum effects, the model permits to establish the limit of classical theories in the study of the thermal conductivity in nanoscopic systems. © 2014 AIP Publishing LLC.

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