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    Influence of electric field and current on the strength of depoled GaN piezoelectric semiconductive ceramics

    Access Status
    Fulltext not available
    Authors
    Qin, G.
    Ma, S.
    Lu, Chunsheng
    Wang, G.
    Zhao, M.
    Date
    2017
    Type
    Journal Article
    
    Metadata
    Show full item record
    Citation
    Qin, G. and Ma, S. and Lu, C. and Wang, G. and Zhao, M. 2017. Influence of electric field and current on the strength of depoled GaN piezoelectric semiconductive ceramics. Ceramics International. 44 (4): pp. 4169-4175.
    Source Title
    Ceramics International
    DOI
    10.1016/j.ceramint.2017.11.219
    ISSN
    0272-8842
    School
    School of Civil and Mechanical Engineering (CME)
    URI
    http://hdl.handle.net/20.500.11937/61496
    Collection
    • Curtin Research Publications
    Abstract

    By using three-point bending tests, the effects of an applied DC electric field and current on the strength of depoled GaN piezoelectric semiconductive ceramics are investigated. Under combined mechanical-voltage-electrical current loading, the corresponding stress and electric fields and carrier distribution in specimens are analyzed based on the finite element method. It is shown that, when an electric field of 0.95kVcm -1 is applied, the bending strength decreases by 14.7% and then, remains unchangeable with further increase of the electric field. In contrast, the bending strength decreases from 11.5 to 8.5MPa as the applied electric current increases from 0 to 5 × 10 4 Am -2 . The results imply that there is a strong correlation between the bending strength and electric field or current for piezoelectric semiconductive ceramics.

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