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    Air-stable doping of Bi2Se3 by MoO3 into the topological regime

    Access Status
    Fulltext not available
    Authors
    Edmonds, M.
    Hellerstedt, J.
    Tadich, A.
    Schenk, A.
    O'Donnell, Kane
    Tosado, J.
    Butch, N.
    Syers, P.
    Paglione, J.
    Fuhrer, M.
    Date
    2015
    Type
    Conference Paper
    
    Metadata
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    Citation
    Edmonds, M. and Hellerstedt, J. and Tadich, A. and Schenk, A. and O'Donnell, K. and Tosado, J. and Butch, N. et al. 2015. Air-stable doping of Bi2Se3 by MoO3 into the topological regime, in Proceedings of the 2014 Conference on Optoelectronic and Microellectronic Materials & Devices, Dec 14-17 2014, pp. 56-59. Perth: Institute of Electrical and Electronics Engineers Inc.
    Source Title
    2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
    DOI
    10.1109/COMMAD.2014.7038651
    ISBN
    9781479968671
    School
    Department of Physics and Astronomy
    URI
    http://hdl.handle.net/20.500.11937/6302
    Collection
    • Curtin Research Publications
    Abstract

    We study vacuum deposition of molecular MoO3 as an acceptor surface transfer dopant for topological insulator Bi2Se3. We perform high-resolution photoelectron spectroscopy on in-situ cleaved Bi2Se3 single crystals and in-situ transport measurements on Bi2Se3 films grown by molecular beam epitaxy. MoO3 is an efficient acceptor, lowering the surface Fermi energy to within -100 meV of the Dirac point, in the topological regime. A 100 nm MoO3 film provides an air-stable doping and passivation layer.

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