Air-stable doping of Bi2Se3 by MoO3 into the topological regime
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Authors
Edmonds, M.
Hellerstedt, J.
Tadich, A.
Schenk, A.
O'Donnell, Kane
Tosado, J.
Butch, N.
Syers, P.
Paglione, J.
Fuhrer, M.
Date
2015Type
Conference Paper
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Edmonds, M. and Hellerstedt, J. and Tadich, A. and Schenk, A. and O'Donnell, K. and Tosado, J. and Butch, N. et al. 2015. Air-stable doping of Bi2Se3 by MoO3 into the topological regime, in Proceedings of the 2014 Conference on Optoelectronic and Microellectronic Materials & Devices, Dec 14-17 2014, pp. 56-59. Perth: Institute of Electrical and Electronics Engineers Inc.
Source Title
2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
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School
Department of Physics and Astronomy
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Abstract
We study vacuum deposition of molecular MoO3 as an acceptor surface transfer dopant for topological insulator Bi2Se3. We perform high-resolution photoelectron spectroscopy on in-situ cleaved Bi2Se3 single crystals and in-situ transport measurements on Bi2Se3 films grown by molecular beam epitaxy. MoO3 is an efficient acceptor, lowering the surface Fermi energy to within -100 meV of the Dirac point, in the topological regime. A 100 nm MoO3 film provides an air-stable doping and passivation layer.