Air-stable doping of Bi2Se3 by MoO3 into the topological regime
MetadataShow full item record
We study vacuum deposition of molecular MoO3 as an acceptor surface transfer dopant for topological insulator Bi2Se3. We perform high-resolution photoelectron spectroscopy on in-situ cleaved Bi2Se3 single crystals and in-situ transport measurements on Bi2Se3 films grown by molecular beam epitaxy. MoO3 is an efficient acceptor, lowering the surface Fermi energy to within -100 meV of the Dirac point, in the topological regime. A 100 nm MoO3 film provides an air-stable doping and passivation layer.