Defect-Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes.
|dc.contributor.author||Jiang, San Ping|
|dc.identifier.citation||Zheng, J. and Lyu, Y. and Xie, C. and Wang, R. and Tao, L. and Wu, H. and Zhou, H. et al. 2018. Defect-Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes. Advanced Materials. 2018: pp. e1801773-e1801773.|
Silicon (Si) requires a protection layer to maintain stable and long-time photoanodic reaction. However, poor charge separation and transfer are key constraint factors in protection layer/Si photoanodes that reduce their water-splitting efficiency. Here, a simultaneous enhancement of charge separation and transfer in Nb-doped NiOx /Ni/black-Si photoanodes induced by plasma treatment is reported. The optimized photoanodes yield the highest charge-separation efficiency (?sep ) of ˜81% at 1.23 V versus reversible hydrogen electrode, corresponding to the photocurrent density of ˜29.1 mA cm-2 . On the basis of detailed characterizations, the concentration and species of oxygen defects in the NiOx -based layer are adjusted by synergistic effect of Nb doping and plasma treatment, which are the dominating factors for forming suitable band structure and providing a favorable hole-migration channel. This work elucidates the important role of oxygen defects on charge separation and transfer in the protection layer/Si-based photoelectrochemical systems and is encouraging for application of this synergistic strategy to other candidate photoanodes.
|dc.publisher||Wiley - V C H Verlag GmbH & Co. KGaA|
|dc.title||Defect-Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes.|
|curtin.department||Fuels and Energy Technology Institute|
|curtin.accessStatus||Fulltext not available|
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