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dc.contributor.authorAbdurakhmanov, Ilkhom
dc.contributor.authorAdamian, G.
dc.contributor.authorAntonenko, N.
dc.contributor.authorKanokov, Z.
dc.date.accessioned2018-12-13T09:08:03Z
dc.date.available2018-12-13T09:08:03Z
dc.date.created2018-12-12T02:47:07Z
dc.date.issued2018
dc.identifier.citationAbdurakhmanov, I. and Adamian, G. and Antonenko, N. and Kanokov, Z. 2018. Non-Markovian feature of the classical Hall effect. European Physical Journal B. 91 (10).
dc.identifier.urihttp://hdl.handle.net/20.500.11937/70887
dc.identifier.doi10.1140/epjb/e2018-90385-0
dc.description.abstract

The classical Hall effect resulting from the impact of external magnetic and electric fields on the non-Markovian dynamics of charge carriers is studied. The dependence of the tangent of the Hall angle on the magnetic field is derived and compared with the experimental data for Zn. The method is proposed to determine experimentally the memory time in a system.

dc.publisherSpringer
dc.titleNon-Markovian feature of the classical Hall effect
dc.typeJournal Article
dcterms.source.volume91
dcterms.source.number10
dcterms.source.issn1434-6028
dcterms.source.titleEuropean Physical Journal B
curtin.departmentSchool of Electrical Engineering, Computing and Mathematical Science (EECMS)
curtin.accessStatusFulltext not available


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