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dc.contributor.authorCao, Y.
dc.contributor.authorGan, S.
dc.contributor.authorGeng, Z.
dc.contributor.authorLiu, Jian
dc.contributor.authorYang, Y.
dc.contributor.authorBao, Q.
dc.contributor.authorChen, H.
dc.identifier.citationCao, Y. and Gan, S. and Geng, Z. and Liu, J. and Yang, Y. and Bao, Q. and Chen, H. 2016. Optically tuned terahertz modulator based on annealed multilayer MoS2. Scientific Reports. 6: Article number 22899.

Controlling the propagation properties of terahertz waves is very important in terahertz technologies applied in high-speed communication. Therefore a new-type optically tuned terahertz modulator based on multilayer-MoS 2 and silicon is experimentally demonstrated. The terahertz transmission could be significantly modulated by changing the power of the pumping laser. With an annealing treatment as a p-doping method, MoS 2 on silicon demonstrates a triple enhancement of terahertz modulation depth compared with the bare silicon. This MoS 2 -based device even exhibited much higher modulation efficiency than the graphene-based device. We also analyzed the mechanism of the modulation enhancement originated from annealed MoS 2, and found that it is different from that of graphene-based device. The unique optical modulating properties of the device exhibit tremendous promise for applications in terahertz switch.

dc.publisherNature Publishing Group
dc.titleOptically tuned terahertz modulator based on annealed multilayer MoS2
dc.typeJournal Article
dcterms.source.titleScientific Reports
curtin.departmentWASM: Minerals, Energy and Chemical Engineering (WASM-MECE)
curtin.accessStatusOpen access

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