Optically tuned terahertz modulator based on annealed multilayer MoS2
|dc.identifier.citation||Cao, Y. and Gan, S. and Geng, Z. and Liu, J. and Yang, Y. and Bao, Q. and Chen, H. 2016. Optically tuned terahertz modulator based on annealed multilayer MoS2. Scientific Reports. 6: Article number 22899.|
Controlling the propagation properties of terahertz waves is very important in terahertz technologies applied in high-speed communication. Therefore a new-type optically tuned terahertz modulator based on multilayer-MoS 2 and silicon is experimentally demonstrated. The terahertz transmission could be significantly modulated by changing the power of the pumping laser. With an annealing treatment as a p-doping method, MoS 2 on silicon demonstrates a triple enhancement of terahertz modulation depth compared with the bare silicon. This MoS 2 -based device even exhibited much higher modulation efficiency than the graphene-based device. We also analyzed the mechanism of the modulation enhancement originated from annealed MoS 2, and found that it is different from that of graphene-based device. The unique optical modulating properties of the device exhibit tremendous promise for applications in terahertz switch.
|dc.publisher||Nature Publishing Group|
|dc.title||Optically tuned terahertz modulator based on annealed multilayer MoS2|
|curtin.department||WASM: Minerals, Energy and Chemical Engineering (WASM-MECE)|