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dc.contributor.authorFan, Z.
dc.contributor.authorGeng, Z.
dc.contributor.authorLv, X.
dc.contributor.authorSu, Y.
dc.contributor.authorYang, Y.
dc.contributor.authorLiu, Jian
dc.contributor.authorChen, H.
dc.identifier.citationFan, Z. and Geng, Z. and Lv, X. and Su, Y. and Yang, Y. and Liu, J. and Chen, H. 2017. Optical Controlled Terahertz Modulator Based on Tungsten Disulfide Nanosheet. Scientific Reports. 7: 14828.

© 2017 The Author(s). The terahertz (THz) modulator, which will be applied in next-generation wireless communication, is a key device in a THz communication system. Current THz modulators based on traditional semiconductors and metamaterials have limited modulation depth or modulation range. Therefore, a THz modulator based on annealed tungsten disulfide (WS2, p-type) and high-resistivity silicon (n-type) is demonstrated. Pumped by a laser, the modulator presents a laser power-dependent modulation effect. Ranging from 0.25 to 2 THz, the modulation depth reaches 99% when the pumping laser is 2.59 W/cm2. The modulator works because the p-n heterojunction can separate and limit carriers to change the conductivity of the device, which results in a modulation of the THz wave. The wide band gap of WS2 can promote the separation and limitation of carriers to obtain a larger modulation depth, which provides a new direction for choosing new materials and new structures to fabricate a better THz modulator.

dc.publisherNature Publishing Group
dc.titleOptical Controlled Terahertz Modulator Based on Tungsten Disulfide Nanosheet
dc.typeJournal Article
dcterms.source.titleScientific Reports
curtin.departmentWASM: Minerals, Energy and Chemical Engineering (WASM-MECE)
curtin.accessStatusOpen access via publisher

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