Stress control of porous silicon film for microelectromechanical systems
Access Status
In process
Authors
Sun, Xiao
Keating, Adrian
Parish, Giacinta
Date
2014Type
Conference Paper
Metadata
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Sun, X. and Keating, A. and Parish, G. 2014. Stress control of porous silicon film for microelectromechanical systems. In: Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), 14th Dec 2014, Univ Western Australia, Perth, AUSTRALIA.
Source Title
2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Source Conference
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD)
ISBN
ISSN
Faculty
Faculty of Science and Engineering
School
John de Laeter Centre (JdLC)
Collection
Abstract
© 2014 IEEE. Control of stress in porous silicon (PS) through porosity changes was studied using X-ray diffraction rocking curve measurements. The effect of thermal annealing on the stress was also investigated, which showed the ability to achieve compressive or tensile films in a reversible manner. The effect of stress on the resonant frequency of PS microbeams was studied to understand the impact of PS film stress when used as the structural layer in a microelectromechanical systems sensor. The results indicated that stress is a significant factor in determining resonant frequency, shifting it by up to a factor of 3.6 from the zero stress state, illustrating the need for accurate control.