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    Stress control of porous silicon film for microelectromechanical systems

    Access Status
    Fulltext not available
    Authors
    Sun, Xiao
    Keating, Adrian
    Parish, Giacinta
    Date
    2014
    Type
    Conference Paper
    
    Metadata
    Show full item record
    Citation
    Sun, X. and Keating, A. and Parish, G. 2014. Stress control of porous silicon film for microelectromechanical systems, in Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD), Dec 14-17 2014, University of Western Australia, Perth, Australia.
    Source Title
    2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
    Source Conference
    Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD)
    DOI
    10.1109/COMMAD.2014.7038693
    ISBN
    9781479968671
    ISSN
    1097-2137
    Faculty
    Faculty of Science and Engineering
    School
    John de Laeter Centre (JdLC)
    URI
    http://hdl.handle.net/20.500.11937/80013
    Collection
    • Curtin Research Publications
    Abstract

    Control of stress in porous silicon (PS) through porosity changes was studied using X-ray diffraction rocking curve measurements. The effect of thermal annealing on the stress was also investigated, which showed the ability to achieve compressive or tensile films in a reversible manner. The effect of stress on the resonant frequency of PS microbeams was studied to understand the impact of PS film stress when used as the structural layer in a microelectromechanical systems sensor. The results indicated that stress is a significant factor in determining resonant frequency, shifting it by up to a factor of 3.6 from the zero stress state, illustrating the need for accurate control.

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