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    Effects of flexoelectricity and strain gradient on bending vibration characteristics of piezoelectric semiconductor nanowires

    84907.pdf (2.155Mb)
    Access Status
    Open access
    Authors
    Zhao, M.
    Niu, J.
    Lu, Chunsheng
    Wang, B.
    Fan, C.
    Date
    2021
    Type
    Journal Article
    
    Metadata
    Show full item record
    Citation
    Zhao, M. and Niu, J. and Lu, C. and Wang, B. and Fan, C. 2021. Effects of flexoelectricity and strain gradient on bending vibration characteristics of piezoelectric semiconductor nanowires. Journal of Applied Physics. 129 (16): Article No. 164301.
    Source Title
    Journal of Applied Physics
    DOI
    10.1063/5.0038782
    ISSN
    0021-8979
    Faculty
    Faculty of Science and Engineering
    School
    School of Civil and Mechanical Engineering
    Remarks

    Reproduced from J. Appl. Phys. 129, 164301 (2021) with the permission of AIP Publishing.

    URI
    http://hdl.handle.net/20.500.11937/85004
    Collection
    • Curtin Research Publications
    Abstract

    In this paper, the governing equation of a piezoelectric semiconductor (PSC) is derived after a consideration of flexoelectricity and the strain gradient effect. A one-dimensional first-order beam model is obtained through integration across its section. Based on this model, theoretical analysis is carried out for a cantilever PSC nanowire subjected to a time-harmonic transverse shear force. The effects of flexoelectricity and the strain gradient on bending vibration characteristics are investigated, including the natural frequencies and distributions of physical quantities. The results show that the strain gradient effect on the natural frequency and stiffness of a PSC nanowire is greater than that of flexoelectricity, while with regard to the influence on electric potential and carrier concentration, the reverse is true. Our findings shed light on the design and optimization of PSC devices such as energy harvesters at the nanoscale.

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