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    Mobility of the {0110} inversion domain boundary in ZnO nanopillars

    Access Status
    Fulltext not available
    Authors
    Wang, J.
    Zhou, M.
    Yang, R.
    Xiao, P.
    Ke, F.
    Lu, Chunsheng
    Date
    2021
    Type
    Journal Article
    
    Metadata
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    Citation
    Wang, J. and Zhou, M. and Yang, R. and Xiao, P. and Ke, F. and Lu, C. 2021. Mobility of the {0110} inversion domain boundary in ZnO nanopillars. Materials Letters. 305.
    Source Title
    Materials Letters
    DOI
    10.1016/j.matlet.2021.130778
    ISSN
    0167-577X
    Faculty
    Faculty of Science and Engineering
    School
    School of Civil and Mechanical Engineering
    URI
    http://hdl.handle.net/20.500.11937/86231
    Collection
    • Curtin Research Publications
    Abstract

    The apparent activation energy of a nanostructure is difficult to directly measure experimentally. In this letter, we present a computational method for estimating the apparent activation energy of a range of semiconductor nanostructures. This method allows the activation energy to be obtained from experimentally measured average activation time or propagation speed at various temperatures of the phase boundary associated with the transformation. The approach entails analyzing the mobility of the transformation in question using a model based on the Arrhenius relation. The specific analysis carried out uses the {0110} inversion domain boundary in wurtzite ZnO nanopillars as example. Molecular dynamics simulations are conducted over the temperature range of 300–900 K of the corresponding available experimental data. The approach and analysis offer a means for experimentally establishing the apparent activation energy of the {0110} inversion domain boundary in a variety of wurtzite-structured II-VI, III-V and IV-IV binary compounds.

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