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    Targeted defect analysis in VCSEL oxide windows using 3D slice and view

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    Fulltext not available
    Authors
    Sun, Xiao
    Rickard, William
    Ironside, Charlie
    Kostakis, I.
    Missous, M.
    Powell, D.
    Anjomshoaa, A.
    Meredith, W.
    Date
    2021
    Type
    Journal Article
    
    Metadata
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    Citation
    Sun, X. and Rickard, W.D.A. and Ironside, C.N. and Kostakis, I. and Missous, M. and Powell, D. and Anjomshoaa, A. et al. 2021. Targeted defect analysis in VCSEL oxide windows using 3D slice and view. Semiconductor Science and Technology. 36 (6): Article No. 065015.
    Source Title
    Semiconductor Science and Technology
    DOI
    10.1088/1361-6641/abfa2f
    ISSN
    0268-1242
    Faculty
    Faculty of Science and Engineering
    School
    John de Laeter Centre (JdLC)
    School of Elec Eng, Comp and Math Sci (EECMS)
    URI
    http://hdl.handle.net/20.500.11937/86292
    Collection
    • Curtin Research Publications
    Abstract

    We report on high resolution analysis of vertical cavity surface emitting lasers (VCSELs) to detect and assess defects in sub-surface layers. We employ a focussed ion beam scanning electron microscope (FIB-SEM) to sputter and image successive cross sections (slice and view technique) in order to produce a 3D reconstruction of the oxide aperture region. High resolution images and measurements of the multilayers and oxide apertures of VCSEL devices were obtained. The process took ∼2.5 h and produced over 270 slice SEM images for a device volume of approximately 13.2 × 16.0 × 13.8 μm3, with a voxel size of 50 nm. On-wafer, single mode VCSEL devices with high and low output powers were analysed to compare their oxide apertures and distributed Bragg reflector (DBR) layer structures. It was found that the low output power VCSEL had DBR layer defects and a 41.8% reduction of effective oxide aperture area, explaining the lower power obtained. The results provide evidence that oxide aperture area and structural defects are major factors that affect the optical output power of VCSEL devices. Outcomes in this work show FIB-SEM slice and view is a valuable method for 3D reconstruction of VCSEL devices, which enables top view, cross-sectional view and angled view of the whole device region as well as designated structures such as oxide aperture or structural defects in various layers. This work demonstrates a promising technique with high resolution (50 nm) 3D imaging for analysis of complex semiconductor devices.

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