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    Effect of Electric Fields on Silicon-Based Monolayers

    93732 .pdf (1.626Mb)
    Access Status
    Open access
    Authors
    Li, Tiexin
    Peiris, Chandramalika
    Dief, Essam
    MacGregor, M.
    Ciampi, Simone
    Darwish, Nadim
    Date
    2022
    Type
    Journal Article
    
    Metadata
    Show full item record
    Citation
    Li, T. and Peiris, C. and Dief, E.M. and MacGregor, M. and Ciampi, S. and Darwish, N. 2022. Effect of Electric Fields on Silicon-Based Monolayers. Langmuir. 38 (9): pp. 2986-2992.
    Source Title
    Langmuir
    DOI
    10.1021/acs.langmuir.2c00015
    ISSN
    0743-7463
    Faculty
    Faculty of Science and Engineering
    School
    School of Molecular and Life Sciences (MLS)
    Funding and Sponsorship
    http://purl.org/au-research/grants/arc/DP190100735
    Remarks

    This document is the Accepted Manuscript version of a Published Work that appeared in final form in Langmuir, copyright © American Chemical Society, after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.langmuir.2c00015.

    URI
    http://hdl.handle.net/20.500.11937/93928
    Collection
    • Curtin Research Publications
    Abstract

    Electric fields can induce bond breaking and bond forming, catalyze chemical reactions on surfaces, and change the structure of self-assembled monolayers on electrode surfaces. Here, we study the effect of electric fields supplied either by an electrochemical potential or by conducting atomic force microscopy (C-AFM) on Si-based monolayers. We report that typical monolayers on silicon undergo partial desorption followed by the oxidation of the underneath silicon at +1.5 V vs Ag/AgCl. The monolayer loses 28% of its surface coverage and 55% of its electron transfer rate constant (ket) when +1.5 V electrochemical potential is applied on the Si surface for 10 min. Similarly, a bias voltage of +5 V applied by C-AFM induces complete desorption of the monolayer at specific sites accompanied by an average oxide growth of 2.6 nm when the duration of the bias applied is 8 min. Current-voltage plots progressively change from rectifying, typical of metal-semiconductor junctions, to insulating as the oxide grows. These results define the stability of Si-based organic monolayers toward electric fields and have implication in the design of silicon-based monolayers, molecular electronics devices, and on the interpretation of charge-transfer kinetics across them.

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