Importance of charging in atomic resolution scanning tunneling microscopy:Study of a single phosphorus atom in a Si(001) surface

Radny, M.; Smith, P.; Reusch, T.; Warschkow, O.; Marks, Nigel; Wilson, H.; Curson, N.; Schofield, S.; McKenzie, D.; Simmons, M.

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Authors

Radny, M.

Smith, P.

Reusch, T.

Warschkow, O.

Marks, Nigel

Wilson, H.

Curson, N.

Schofield, S.

McKenzie, D.

Simmons, M.

Date

2006

Type

Journal Article

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Citation

Radny, M. and Smith, P. and Reusch, T. and Warschkow, O. and Marks, N. and Wilson, H. and Curson, N. et al. 2006. Importance of charging in atomic resolution scanning tunneling microscopy:Study of a single phosphorus atom in a Si(001) surface. Physical Review B. 74: pp. 113311-1-113311-4.

Source Title

Physical Review B