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dc.contributor.authorRadny, M.
dc.contributor.authorSmith, P.
dc.contributor.authorReusch, T.
dc.contributor.authorWarschkow, O.
dc.contributor.authorMarks, Nigel
dc.contributor.authorWilson, H.
dc.contributor.authorCurson, N.
dc.contributor.authorSchofield, S.
dc.contributor.authorMcKenzie, D.
dc.contributor.authorSimmons, M.
dc.date.accessioned2017-01-30T11:22:43Z
dc.date.available2017-01-30T11:22:43Z
dc.date.created2014-10-08T05:25:31Z
dc.date.issued2006
dc.identifier.citationRadny, M. and Smith, P. and Reusch, T. and Warschkow, O. and Marks, N. and Wilson, H. and Curson, N. et al. 2006. Importance of charging in atomic resolution scanning tunneling microscopy:Study of a single phosphorus atom in a Si(001) surface. Physical Review B. 74: pp. 113311-1-113311-4.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/11072
dc.publisherAmerican Physical Society
dc.titleImportance of charging in atomic resolution scanning tunneling microscopy:Study of a single phosphorus atom in a Si(001) surface
dc.typeJournal Article
dcterms.source.volume74
dcterms.source.startPage113311
dcterms.source.endPage1
dcterms.source.issn1098-0121
dcterms.source.titlePhysical Review B
curtin.accessStatusFulltext not available


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