Importance of charging in atomic resolution scanning tunneling microscopy:Study of a single phosphorus atom in a Si(001) surface
dc.contributor.author | Radny, M. | |
dc.contributor.author | Smith, P. | |
dc.contributor.author | Reusch, T. | |
dc.contributor.author | Warschkow, O. | |
dc.contributor.author | Marks, Nigel | |
dc.contributor.author | Wilson, H. | |
dc.contributor.author | Curson, N. | |
dc.contributor.author | Schofield, S. | |
dc.contributor.author | McKenzie, D. | |
dc.contributor.author | Simmons, M. | |
dc.date.accessioned | 2017-01-30T11:22:43Z | |
dc.date.available | 2017-01-30T11:22:43Z | |
dc.date.created | 2014-10-08T05:25:31Z | |
dc.date.issued | 2006 | |
dc.identifier.citation | Radny, M. and Smith, P. and Reusch, T. and Warschkow, O. and Marks, N. and Wilson, H. and Curson, N. et al. 2006. Importance of charging in atomic resolution scanning tunneling microscopy:Study of a single phosphorus atom in a Si(001) surface. Physical Review B. 74: pp. 113311-1-113311-4. | |
dc.identifier.uri | http://hdl.handle.net/20.500.11937/11072 | |
dc.publisher | American Physical Society | |
dc.title | Importance of charging in atomic resolution scanning tunneling microscopy:Study of a single phosphorus atom in a Si(001) surface | |
dc.type | Journal Article | |
dcterms.source.volume | 74 | |
dcterms.source.startPage | 113311 | |
dcterms.source.endPage | 1 | |
dcterms.source.issn | 1098-0121 | |
dcterms.source.title | Physical Review B | |
curtin.accessStatus | Fulltext not available |