Erratum: Electronic structure models of phosphorus d -doped silicon ([Physical Review B (2009) 79 (033204))

Carter, Damien; Warschkow, O.; Marks, Nigel; McKenzie, D.

doi:http://doi.org/10.1103/PhysRevB.80.049901

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Authors

Carter, Damien

Warschkow, O.

Marks, Nigel

McKenzie, D.

Date

2009

Type

Journal Article

Metadata

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Abstract

No Abstract Available

Citation

Carter, D. and Warschkow, O. and Marks, N. and McKenzie, D. 2009. Erratum: Electronic structure models of phosphorus d -doped silicon ([Physical Review B (2009) 79 (033204)). Physical Review B - Condensed Matter and Materials Physics. 80 (4).

Source Title

Physical Review B - Condensed Matter and Materials Physics

URI

http://hdl.handle.net/20.500.11937/15440

DOI

http://doi.org/10.1103/PhysRevB.80.049901

Department

Science and Mathematics Education Centre (SMEC)

Collections

Research Papers