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Erratum: Electronic structure models of phosphorus d -doped silicon ([Physical Review B (2009) 79 (033204))

dc.contributor.authorCarter, Damien
dc.contributor.authorWarschkow, O.
dc.contributor.authorMarks, Nigel
dc.contributor.authorMcKenzie, D.
dc.date.accessioned2017-01-30T11:49:45Z
dc.date.available2017-01-30T11:49:45Z
dc.date.created2016-09-12T08:36:36Z
dc.date.issued2009
dc.identifier.citationCarter, D. and Warschkow, O. and Marks, N. and McKenzie, D. 2009. Erratum: Electronic structure models of phosphorus d -doped silicon ([Physical Review B (2009) 79 (033204)). Physical Review B - Condensed Matter and Materials Physics. 80 (4).
dc.identifier.urihttp://hdl.handle.net/20.500.11937/15440
dc.identifier.doi10.1103/PhysRevB.80.049901
dc.titleErratum: Electronic structure models of phosphorus d -doped silicon ([Physical Review B (2009) 79 (033204))
dc.typeJournal Article
dcterms.source.volume80
dcterms.source.number4
dcterms.source.issn1098-0121
dcterms.source.titlePhysical Review B - Condensed Matter and Materials Physics
curtin.departmentScience and Mathematics Education Centre (SMEC)
curtin.accessStatusFulltext not available


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