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dc.contributor.authorSchofield, S.
dc.contributor.authorCurson, N.
dc.contributor.authorSimmons, M.
dc.contributor.authorWarschkow, O.
dc.contributor.authorMarks, Nigel
dc.contributor.authorWilson, H.
dc.contributor.authorMcKenzie, D.
dc.contributor.authorSmith, P.
dc.contributor.authorRadny, M.
dc.date.accessioned2017-01-30T12:32:50Z
dc.date.available2017-01-30T12:32:50Z
dc.date.created2014-10-08T05:25:32Z
dc.date.issued2006
dc.identifier.citationSchofield, S. and Curson, N. and Simmons, M. and Warschkow, O. and Marks, N. and Wilson, H. and McKenzie, D. et al. 2006. Atomic-scale observation and control of the reaction of phosphine with silicon. e-Journal of Surface Science and Nanotechnology. 4: pp. 609-613.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/22646
dc.publisherThe Surface Science Society of Japan
dc.titleAtomic-scale observation and control of the reaction of phosphine with silicon
dc.typeJournal Article
dcterms.source.volume4
dcterms.source.startPage609
dcterms.source.endPage613
dcterms.source.issn1348-0391
dcterms.source.titlee-Journal of Surface Science and Nanotechnology
curtin.accessStatusFulltext not available


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