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    Electronic structure of two interacting phosphorus δ-doped layers in silicon

    188742_188742.pdf (898.7Kb)
    Access Status
    Open access
    Authors
    Carter, Damien
    Warschkow, O.
    Marks, Nigel
    McKenzie, D.
    Date
    2013
    Type
    Journal Article
    
    Metadata
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    Citation
    Carter, D.J. and Warschkow, O. and Marks, N.A. and McKenzie, D.R. 2013. Electronic structure of two interacting phosphorus δ-doped layers in silicon. Physical Review B. 87 (4): 045204.
    Source Title
    Physical Review B
    DOI
    10.1103/PhysRevB.87.045204
    ISSN
    10980121
    Remarks

    Copyright © 2013 by the American Physical Society

    URI
    http://hdl.handle.net/20.500.11937/22808
    Collection
    • Curtin Research Publications
    Abstract

    Density functional theory is used to quantify the interaction of a pair of 1/4-monolayer phosphorus δ-doped layers in silicon. We investigate changes in the electronic structure as the distance between the two δ-doped layers is altered and identify the onset of interactions between the transverse and longitudinal bands. The calculations show that the valley splitting is insensitive to the separation distance, while the interlayer band splittings are insensitive to the representation used to describe the dopant disorder. These observations are exploited in a hybrid model which enables the calculation of accurate splittings of realistically disordered systems at tractable computational cost.

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