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dc.contributor.authorCarter, Damien
dc.contributor.authorWarschkow, O.
dc.contributor.authorMarks, Nigel
dc.contributor.authorMcKenzie, D.
dc.date.accessioned2017-01-30T12:33:44Z
dc.date.available2017-01-30T12:33:44Z
dc.date.created2013-01-15T20:00:27Z
dc.date.issued2013
dc.identifier.citationCarter, D.J. and Warschkow, O. and Marks, N.A. and McKenzie, D.R. 2013. Electronic structure of two interacting phosphorus δ-doped layers in silicon. Physical Review B. 87 (4): 045204.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/22808
dc.identifier.doi10.1103/PhysRevB.87.045204
dc.description.abstract

Density functional theory is used to quantify the interaction of a pair of 1/4-monolayer phosphorus δ-doped layers in silicon. We investigate changes in the electronic structure as the distance between the two δ-doped layers is altered and identify the onset of interactions between the transverse and longitudinal bands. The calculations show that the valley splitting is insensitive to the separation distance, while the interlayer band splittings are insensitive to the representation used to describe the dopant disorder. These observations are exploited in a hybrid model which enables the calculation of accurate splittings of realistically disordered systems at tractable computational cost.

dc.publisherAmerican Physical Society
dc.titleElectronic structure of two interacting phosphorus δ-doped layers in silicon
dc.typeJournal Article
dcterms.source.volume87
dcterms.source.startPage045204
dcterms.source.endPage045204
dcterms.source.issn10980121
dcterms.source.titlePhysical Review B
curtin.note

Copyright © 2013 by the American Physical Society

curtin.department
curtin.accessStatusOpen access


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