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Microstructural origins of localization in InGaN quantum wells

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Authors
Oliver, R.
Bennett, S.
Zhu, T.
Beesley, D.
Kappers, M.
Saxey, David
Cerezo, A.
Humphreys, C.
Date
2010
Type
Journal Article

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Oliver, R. and Bennett, S. and Zhu, T. and Beesley, D. and Kappers, M. and Saxey, D. and Cerezo, A. et al. 2010. Microstructural origins of localization in InGaN quantum wells. Journal of Physics D: Applied Physics. 43 (35).
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Journal of Physics D: Applied Physics
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John de Laeter CoE in Mass Spectrometry
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Abstract

The startling success of GaN-based light emitting diodes despite the high density of dislocations found in typical heteroepitaxial material has been attributed to localization of carriers at non-uniformities in the quantum wells (QWs) which form the active region of such devices. Here, we review the different possible structures within the QWs which could act as localization sites, at length scales ranging from the atomic to the tens of nanometre range. In some QWs several localization mechanisms could be operational, but the challenge remains to optimize the QWs' structure to achieve improved quantum efficiencies, particularly at high excitation powers. © 2010 IOP Publishing Ltd.