Microstructural origins of localization in InGaN quantum wells

Oliver, R. and Bennett, S. and Zhu, T. and Beesley, D. and Kappers, M. and Saxey, D. and Cerezo, A. et al. 2010. Microstructural origins of localization in InGaN quantum wells. Journal of Physics D: Applied Physics. 43 (35).

Source Title

Journal of Physics D: Applied Physics

DOI

10.1088/0022-3727/43/35/354003

ISSN

0022-3727

School

John de Laeter CoE in Mass Spectrometry

URI

http://hdl.handle.net/20.500.11937/23420

Collection

Curtin Research Publications

Abstract

The startling success of GaN-based light emitting diodes despite the high density of dislocations found in typical heteroepitaxial material has been attributed to localization of carriers at non-uniformities in the quantum wells (QWs) which form the active region of such devices. Here, we review the different possible structures within the QWs which could act as localization sites, at length scales ranging from the atomic to the tens of nanometre range. In some QWs several localization mechanisms could be operational, but the challenge remains to optimize the QWs' structure to achieve improved quantum efficiencies, particularly at high excitation powers. © 2010 IOP Publishing Ltd.