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dc.contributor.authorOliver, R.
dc.contributor.authorBennett, S.
dc.contributor.authorZhu, T.
dc.contributor.authorBeesley, D.
dc.contributor.authorKappers, M.
dc.contributor.authorSaxey, David
dc.contributor.authorCerezo, A.
dc.contributor.authorHumphreys, C.
dc.identifier.citationOliver, R. and Bennett, S. and Zhu, T. and Beesley, D. and Kappers, M. and Saxey, D. and Cerezo, A. et al. 2010. Microstructural origins of localization in InGaN quantum wells. Journal of Physics D: Applied Physics. 43 (35).

The startling success of GaN-based light emitting diodes despite the high density of dislocations found in typical heteroepitaxial material has been attributed to localization of carriers at non-uniformities in the quantum wells (QWs) which form the active region of such devices. Here, we review the different possible structures within the QWs which could act as localization sites, at length scales ranging from the atomic to the tens of nanometre range. In some QWs several localization mechanisms could be operational, but the challenge remains to optimize the QWs' structure to achieve improved quantum efficiencies, particularly at high excitation powers. © 2010 IOP Publishing Ltd.

dc.publisherIOP Publishing Ltd
dc.titleMicrostructural origins of localization in InGaN quantum wells
dc.typeJournal Article
dcterms.source.titleJournal of Physics D: Applied Physics
curtin.departmentJohn de Laeter CoE in Mass Spectrometry
curtin.accessStatusFulltext not available

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