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dc.contributor.authorOliver, R.
dc.contributor.authorBennett, S.
dc.contributor.authorZhu, T.
dc.contributor.authorBeesley, D.
dc.contributor.authorKappers, M.
dc.contributor.authorSaxey, David
dc.contributor.authorCerezo, A.
dc.contributor.authorHumphreys, C.
dc.date.accessioned2017-01-30T12:37:08Z
dc.date.available2017-01-30T12:37:08Z
dc.date.created2016-09-12T08:36:41Z
dc.date.issued2010
dc.date.submitted2016-09-12
dc.identifier.citationOliver, R. and Bennett, S. and Zhu, T. and Beesley, D. and Kappers, M. and Saxey, D. and Cerezo, A. et al. 2010. Microstructural origins of localization in InGaN quantum wells. Journal of Physics D: Applied Physics. 43 (35).
dc.identifier.urihttp://hdl.handle.net/20.500.11937/23420
dc.identifier.doi10.1088/0022-3727/43/35/354003
dc.description.abstract

The startling success of GaN-based light emitting diodes despite the high density of dislocations found in typical heteroepitaxial material has been attributed to localization of carriers at non-uniformities in the quantum wells (QWs) which form the active region of such devices. Here, we review the different possible structures within the QWs which could act as localization sites, at length scales ranging from the atomic to the tens of nanometre range. In some QWs several localization mechanisms could be operational, but the challenge remains to optimize the QWs' structure to achieve improved quantum efficiencies, particularly at high excitation powers. © 2010 IOP Publishing Ltd.

dc.publisherIOP Publishing Ltd
dc.titleMicrostructural origins of localization in InGaN quantum wells
dc.typeJournal Article
dcterms.dateSubmitted2016-09-12
dcterms.source.volume43
dcterms.source.number35
dcterms.source.issn0022-3727
dcterms.source.titleJournal of Physics D: Applied Physics
curtin.digitool.pid243221
curtin.departmentJohn de Laeter CoE in Mass Spectrometry
curtin.identifier.elementsidELEMENTS-95450
curtin.accessStatusFulltext not available


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