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dc.contributor.authorMyers, M
dc.contributor.authorKhir, F
dc.contributor.authorPodolska, Anna
dc.contributor.authorUmana-Membreno, G
dc.contributor.authorNener, B
dc.contributor.authorBaker, M
dc.contributor.authorParish, G
dc.date.accessioned2017-01-30T12:41:30Z
dc.date.available2017-01-30T12:41:30Z
dc.date.created2014-03-30T20:00:57Z
dc.date.issued2013
dc.date.submitted2014-05-19
dc.identifier.citationMyers, M and Khir, F and Podolska, A and Umana-Membreno, G and Nener, B and Baker, M and Parish, G. 2013. Nitrate ion detection using AlGaN/GaN heterostructure-based devices without a reference electrode. Sensors and Actuators B. 181: pp. 301-305.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/24180
dc.identifier.doi10.1016/j.snb.2013.02.006
dc.description.abstract

AlGaN/GaN heterostructure-based devices can be engineered through heterostructure design to have a high transconductance near zero gate–drain voltage, potentially enabling high sensitivity, reference electrode free, ion sensing. As a proof of concept, these devices were coated with a PVC-based membrane containing a plasticizer and an ionophore to detect nitrate ions in solution. The sensor response is measured as a change in conductivity across two contacts using a Kelvin probe (or four-contact) geometry, with the current between the two outer contacts kept constant. We show that this sensor for nitrate is sensitive and stable with a rapid response time (i.e. less than 60 s). The detection limit remains consistently low over multiple runs/days. In a 0.1 M KH2PO4 ion buffer, a detection limit of less than 1 × 10-6 M and a linear response range of 10-6–10-3 M were achieved. Furthermore, detection limits of approximately 10-6 M and 10-4 M in 0.1 M K2SO4 and 0.1 M KCl ion buffers, respectively, were demonstrated. In a 0.1 M KH2PO4 ion buffer, there was minimal change in sensor response upon addition of KOH increasing the pH from approximately 4–11. As a control, devices without a PVC membrane coating were tested under identical conditions and exhibited negligible response to nitrate ion exposure. Furthermore, using transistor theory, we show that the apparent gate response is near-Nenrstian under a variety of conditions. The success of this study paves the way for extending this technology to selectively sensing multiple ions in water through incorporation of the appropriate polymer based membranes on arrays of devices.

dc.publisherElsevier SA
dc.titleNitrate ion detection using AlGaN/GaN heterostructure-based devices without a reference electrode
dc.typeJournal Article
dcterms.dateSubmitted2014-03-31
dcterms.source.volume181
dcterms.source.startPage301
dcterms.source.endPage305
dcterms.source.issn09254005
dcterms.source.titleSensors and Actuators B
curtin.digitool.pid197797
curtin.pubStatusPublished
curtin.department
curtin.identifier.scriptidPUB-SE-DEG-RH-80419
curtin.accessStatusFulltext not available


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