Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures
Fulltext not available
MetadataShow full item record
Kocan, M. and Umana-Membreno, G. and Kilburn, M. and Fletcher, I. and Recht, F. and McCarthy, L. and Mishra, U. et al. 2008. Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures. Journal of Electronic Materials. 37 (5): pp. 554-557.
Journal of Electronic Materials
This paper reports results of scanning ion probe studies fo silicon implantation profiles in source and drain regions of AlGaN/GaN high-electron-mobility transistor (HEMT) heterostructures. It is shown that both the undoped channel length and the transition region between implanted and non-implanted regions become wider with increasing depth in the structure. These results may explain the previously reported existence of resistance associated with the transition region between implanted and non-implanted semiconductor regions in AlGaN/GaN HEMT heterostructures with non-alloyed Si-implanted source and drain ohmic contact regions.
Showing items related by title, author, creator and subject.
Correlation between dental implant insertion torque and mandibular alveolar bone density in osteopenic and osteoporotic subjectsChai, J.; Chau, Anson; Chu, F.; Chow, T. (2012)Purpose: Osteoporotic patients require particular attention during implant placement, and insertion torque (IT) has been established as a simple and noninvasive method to assess local bone quality and primary implant ...
Podolska, Anna; Hool, L; Pfleger, K; Mishra, U; Parish, G; Nener, B (2013)In this work, detection of live cell biological activity has been confirmed for label-free AlGaN/GaN based biosensors. Live cells were seeded in solution onto the exposed gate region of packaged AlGaN/GaN field effect ...
Finite element analysis of bone-implant biomechanics: Refinement through featuring various osseointegration conditionsKurniawan, Denni; Nor, F.; Lee, H.; Lim, J. (2012)A refinement technique is proposed for developing finite element models capable of simulating peri-implant bone conditions for bone types II, III, and IV at various degrees of osseointegration. The refined models feature ...