A Comprehensive Analysis of Plasmonics-Based GaAs MSM-Photodetector for High Bandwidth-Product Responsivity

Das, Narottam; Masouleh, F.; Mashayekhi, H.

doi:10.1155/2013/793253

195512_103364_8_PV4_AOEJournal-793253.pdf (2.210Mb)

Access Status

Open access

Authors

Das, Narottam

Masouleh, F.

Mashayekhi, H.

Date

2013

Type

Journal Article

Metadata

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Citation

Das, Narottam and Masouleh, Farzaneh Fadakar and Mashayekhi, Hamid Reza. 2013. A Comprehensive Analysis of Plasmonics-Based GaAs MSM-Photodetector for High Bandwidth-Product Responsivity. Advances in OptoElectronics. 2013 (Article ID 793253): pp. 1-10.

Source Title

Advances in OptoElectronics

DOI

10.1155/2013/793253

ISSN

1687-563X

Remarks

This work is published under a Creative Commons Attribution Licence 3.0 http://creativecommons.org/licenses/by/3.0/au/

URI

http://hdl.handle.net/20.500.11937/25625

Collection

Curtin Research Publications

Abstract

A detailed numerical study of subwavelength nanogratings behavior to enhance the light absorption characteristics in plasmonic-based metal-semiconductor-metal photodetectors (MSM-PDs) is performed by implementation of 2D finite-difference time-domain (FDTD) algorithm. Due to the structure design and changes in the device physical parameters, various devices with different geometries are simulated and compared. Parameters like nano-grating height and duty cycle (DC) are optimized for rectangular and taper subwavelength metal nanogratings on GaAs substrate and their impact on light absorption below the diffraction limits are confirmed. The calculated light enhancement is ~32.7-times for an optimized device in comparison with a conventional MSM-PD. This enhancement is attributed to the plasmonic effects in the near-field region.