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dc.contributor.authorDas, Narottam
dc.contributor.authorMasouleh, F.
dc.contributor.authorMashayekhi, H.
dc.date.accessioned2017-01-30T12:49:20Z
dc.date.available2017-01-30T12:49:20Z
dc.date.created2014-02-23T20:00:25Z
dc.date.issued2013
dc.identifier.citationDas, Narottam and Masouleh, Farzaneh Fadakar and Mashayekhi, Hamid Reza. 2013. A Comprehensive Analysis of Plasmonics-Based GaAs MSM-Photodetector for High Bandwidth-Product Responsivity. Advances in OptoElectronics. 2013 (Article ID 793253): pp. 1-10.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/25625
dc.identifier.doi10.1155/2013/793253
dc.description.abstract

A detailed numerical study of subwavelength nanogratings behavior to enhance the light absorption characteristics in plasmonic-based metal-semiconductor-metal photodetectors (MSM-PDs) is performed by implementation of 2D finite-difference time-domain (FDTD) algorithm. Due to the structure design and changes in the device physical parameters, various devices with different geometries are simulated and compared. Parameters like nano-grating height and duty cycle (DC) are optimized for rectangular and taper subwavelength metal nanogratings on GaAs substrate and their impact on light absorption below the diffraction limits are confirmed. The calculated light enhancement is ~32.7-times for an optimized device in comparison with a conventional MSM-PD. This enhancement is attributed to the plasmonic effects in the near-field region.

dc.publisherHindawi Publishing Corporation
dc.titleA Comprehensive Analysis of Plasmonics-Based GaAs MSM-Photodetector for High Bandwidth-Product Responsivity
dc.typeJournal Article
dcterms.source.volume2013
dcterms.source.issn1687-563X
dcterms.source.titleAdvances in OptoElectronics
curtin.note

This work is published under a Creative Commons Attribution Licence 3.0 http://creativecommons.org/licenses/by/3.0/au/

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curtin.accessStatusOpen access


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