Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells

Bennett, S.; Saxey, David; Kappers, M.; Barnard, J.; Humphreys, C.; Smith, G.; Oliver, R.

doi:10.1063/1.3610468

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Authors

Bennett, S.

Saxey, David

Kappers, M.

Barnard, J.

Humphreys, C.

Smith, G.

Oliver, R.

Date

2011

Type

Journal Article

Metadata

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Citation

Bennett, S. and Saxey, D. and Kappers, M. and Barnard, J. and Humphreys, C. and Smith, G. and Oliver, R. 2011. Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells. Applied Physics Letters. 99 (2): Article ID 021906.

Source Title

Applied Physics Letters

DOI

10.1063/1.3610468

ISSN

0003-6951

School

American Institute of Physics

URI

http://hdl.handle.net/20.500.11937/25817

Collection

Curtin Research Publications

Abstract

This study addresses the ongoing debate concerning the distribution of indium in InxGa1−xN quantum wells(QWs) using a combination of atom probe tomography (APT) and transmission electron microscopy(TEM). APT analysis of InxGa1−xN QWs, which had been exposed to the electron beam in a TEM, revealed an inhomogeneous indium distribution which was not observed in a control sample which had not been exposed to the electron beam. These data validate the effectiveness of APT in detecting subtle compositional inhomogeneities in the nitrides.