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Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells

dc.contributor.authorBennett, S.
dc.contributor.authorSaxey, David
dc.contributor.authorKappers, M.
dc.contributor.authorBarnard, J.
dc.contributor.authorHumphreys, C.
dc.contributor.authorSmith, G.
dc.contributor.authorOliver, R.
dc.date.accessioned2017-01-30T12:50:19Z
dc.date.available2017-01-30T12:50:19Z
dc.date.created2015-10-29T04:09:31Z
dc.date.issued2011
dc.identifier.citationBennett, S. and Saxey, D. and Kappers, M. and Barnard, J. and Humphreys, C. and Smith, G. and Oliver, R. 2011. Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells. Applied Physics Letters. 99 (2): Article ID 021906.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/25817
dc.identifier.doi10.1063/1.3610468
dc.description.abstract

This study addresses the ongoing debate concerning the distribution of indium in InxGa1−xN quantum wells(QWs) using a combination of atom probe tomography (APT) and transmission electron microscopy(TEM). APT analysis of InxGa1−xN QWs, which had been exposed to the electron beam in a TEM, revealed an inhomogeneous indium distribution which was not observed in a control sample which had not been exposed to the electron beam. These data validate the effectiveness of APT in detecting subtle compositional inhomogeneities in the nitrides.
dc.titleAtom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells
dc.typeJournal Article
dcterms.source.volume99
dcterms.source.number2
dcterms.source.issn0003-6951
dcterms.source.titleApplied Physics Letters
curtin.departmentAmerican Institute of Physics
curtin.accessStatusFulltext not available


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